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Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

机译：使用深能级瞬态光谱（DLTs）和Laplace-DLTs（LDLTs）通过3keV ar溅射在sb掺杂Ge中引入缺陷的表征

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Nyamhere, Cloud; Das, A.G.M.; Odendaal, R.Q.; Carr, Alan; Auret, F.D. (Francois Danie); Chawanda, Albert; Mtangi, Wilbert;
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年度 2009
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1. Characterization of defects introduced in Sb doped Ge by 3 keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS) [J] . Nyamhere C, Das AGM, Auret FD, Physica, B. Condensed Matter . 2009,第22期

机译：使用深能级瞬态光谱（DLTS）和Laplace-DLTS（LDLTS）通过3 keV Ar溅射法对掺Sb的Ge中引入的缺陷进行表征
2. Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation [J] . Nyamhere C., Das A.G.M., Auret F.D., Physica, B. Condensed Matter . 2011,第15a16期

机译：2 MeV质子辐照在掺锑Ge中引入的缺陷的深层瞬态光谱（DLTS）研究
3. Point Defects in Pb-, Bi-, and In-Doped CdZnTe Detectors: Deep-Level Transient Spectroscopy (DLTS) Measurements [J] . R. GUL, K. KEETER, R. RODRIGUEZ, Journal of Electronic Materials . 2012,第3期

机译：Pb，Bi和In-掺杂CdZnTe检测器中的点缺陷：深层瞬态光谱（DLTS）测量
4. A study of the dependence of electron-induced defects on the doping impurity density in n-type germanium by deep-level transient spectroscopy (DLTS) [C] . Cloud Nyamhere, F.D. Auret, A.G.M. Das, International Conference on Defects in Semiconductors; 20070722-27; Albuquerque,NM(US) . 2007

机译：深层瞬态光谱法研究电子诱导缺陷对n型锗掺杂杂质密度的依赖性
5. Defect Characterization of 4H-SiC by Deep Level Transient Spectroscopy (DLTS) and Influence of Defects on Device Performance [D] . Mannan, Mohammad Abdul 2015

机译：用深层瞬态光谱法（DLTS）表征4H-SiC的缺陷及其对器件性能的影响
6. Deep Level Transient Spectroscopy in Quantum Dot Characterization [O] . O Engström, M Kaniewska 2008

机译：量子点表征中的深层瞬态光谱
7. Deep level transient spectroscopy (DLTS) study of defects introduced in antimony doped Ge by 2 MeV proton irradiation [O] . Nyamhere Cloud, Das A.G.M., Pineda-Vargas C.A., 2011

机译：深层瞬态光谱（DLTs）研究2 meV质子辐照引入锑掺杂Ge中的缺陷
8. Pressure-Dependent DLTS (Deep Level Transient Spectroscopy) Experiments on Si-Doped AlGaAs [R] . Farmer, J. W. , Hjalmarson, H. P. , Samara, G. A. 1987

机译：si掺杂alGaas上的压力相关DLTs（深能级瞬态光谱）实验

Characterization of defects introduced in Sb doped Ge by 3keV Ar sputtering using deep level transient spectroscopy (DLTS) and Laplace-DLTS (LDLTS)

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